2002. 9. 12 1/2 semiconductor technical data kta1266 epitaxial planar pnp transistor revision no : 2 general purpose application. switching application. features excellent h fe linearity : h fe (2)=80(typ.) at v ce =-6v, i c =-150ma : h fe (i c =0.1ma)/h fe (i c =2ma)=0.95(typ.). low noise : nf=1db(typ.). at f=1khz. complementary to ktc3198. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 ) note : h fe (1) classification o:70 140, y:120 240, gr:200 400 characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma base current i b -50 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (1) (note) v ce =-6v, i c =-2ma 70 - 400 h fe (2) v ce =-6v, i c =-150ma 25 - - collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.3 v base-emitter saturation voltage v be(sat) i c =-100ma, i b =-10ma - - -1.1 v transition frequency f t v ce =-10v, i c =-1ma 80 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.0 7.0 pf base intrinsic resistance rbb' v cb =-10v, i e =1ma, f=30mhz - 30 - noise figure nf v ce =-6v, i c =-0.1ma, rg=10k , f=1khz - 1.0 10 db
2002. 9. 12 2/2 kta1266 revision no : 2 collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta 30 dc current gain h fe -0.1 collector current i (ma) c h - i v - i c collector current i (ma) -0.1 -10 ce(sat) collector-emitter saturation base current i ( a) b -0.3 0 base-emitter voltage v (v) be i - v -1 -2 -3 -4 -5 -6 -7 -40 -80 -120 -160 -200 -240 common emitter ta=25 c -2.0 -1.5 -1.0 -0.5 i =-0.2ma 0 b fe c -0.3 -1 -3 -10 -30 -100 -300 50 100 300 500 1k 3k 3k 1k 500 300 100 50 -300 -100 -30 -10 -3 -1 -0.3 c t f - i c collector current i (ma) -0.1 t transition frequency f (mhz) 30 common emitter ta=100 c ta=25 c ta=-25 c v =-6v ce v =-1v ce ce(sat) c voltage v (mv) -0.3 -1 -3 -10 -30 -100 -300 -30 -50 -100 -300 -500 -1k common emitter i /i =10 cb ta=100 c ta=25 c ta=-25 c common emitter v =-10v ta=25 c ce bbe -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -3 -10 -30 -100 -300 -1k common emitter v =-6v ce ta=100 c ta=25 c ta =-25 c p (mw) 25 50 75 100 125 150 175 100 200 300 400 500 600 700
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